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dat ashee t www.rohm.com ? 2012 rohm co., ltd. all rights reserved. RSJ400N10 nch 100v 40a power mosfet junction temperature t j 150 c range of storage temperature t stg - 55 to + 150 c gate - source voltage v gss ? 20 v p d 50 w mj a e as *3 i ar *3 14.6 10 p d 1.35 w avalanche energy, single pulse avalanche current t c = 25c t a = 25c *4 power dissipation pulsed drain current i d,pulse *2 ? 80 a t c = 25c t c = 100c continuous drain current i d *1 a ? 40 i d *1 ? 22 a drain - source voltage v dss 100 v automotive solenoid drive taping code tl marking RSJ400N10 l absolute maximum ratings (t a = 25c) parameter symbol value unit 6) 100% avalanche tested l packaging specifications type packaging taping l application reel size (mm) 330 switching power supply tape width (mm) 16 automotive motor drive basic ordering unit (pcs) 2,500 l features l inner circuit 1) low on-resistance. 2) fast switching speed. 3) drive circuits can be simple. 4) parallel use is easy. 5) pb-free lead plating ; rohs compliant l outline v dss 100v lpts (sc-83) r ds(on) (max.) 27m w i d 40a p d 50w * 1 esd protection diode * 2 body diode (1) gate (2) drain (3) source (1) (3) (2) * 1 * 2 (2) (1) (3) 1/12 2012.08 - rev.a to-263(d2pak) downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RSJ400N10 thermal resistance, junction - ambient v gs = 10v, i d = 40a t j = 125c - - 21 30 56 m w s static drain - source on - state resistance v gs = 10v, i d = 40a - 19 27 - 42 g fs v gs = 4.0v, i d = 40a 60 r ds(on) *5 forward transfer admittance v ds = 10v, i d = 40a 23 ? 10 m a t j = 125c v gate threshold voltage v gs (th) v ds = 10v, i d = 1ma 1.0 - 2.5 gate - source leakage current i gss v gs = ? 20v, v ds = 0v - - m a c v 100 - - - - 265 unit max. - 2.5 c/w - - c/w 92.6 - l thermal resistance parameter symbol symbol conditions t sold thermal resistance, junction - ambient *4 soldering temperature, wavesoldering for 10s r thja r thjc l electrical characteristics (t a = 25c) parameter values unit min. typ. drain - source breakdown voltage zero gate voltage drain current v (br)dss i dss - - v ds = 100v, v gs = 0v t j = 25c v ds = 100v, v gs = 0v v gs = 0v, i d = 1ma - 1 - 100 values min. typ. max. 2/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RSJ400N10 *1 limited only by maximum temperature allowed. *2 pw ? 10 m s, duty cycle ? 1% *3 l ? 200 m h, v dd = 50v, rg = 10 w , starting t j = 25c *4 mounted on a epoxy pcb fr4 (27mm 25mm 0.8mm) *5 pulsed - - v i d = 40a v gs = 10v - 12 - gate - drain charge q gd *5 - 18 - nc gate - source charge q gs *5 total gate charge q g *5 v dd ? 50v - - l gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. turn - on delay time t d(on) *5 v dd ? 50v, v gs = 10v - 25 - ns rise time t r *5 i d = 20a - 80 - turn - off delay time t d(off) *5 r l = 12 w - 205 - fall time t f *5 r g = 10 w - 250 pf output capacitance c oss v ds = 25v - 270 - reverse transfer capacitance c rss f = 1mhz input capacitance c iss v gs = 0v - 3600 - - 180 - l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. m c 80 a forward voltage v sd *5 v gs = 0v, i s = 40a - - 1.5 v 66 - ns t c = 25c reverse recovery time t rr *5 i s *1 - - 40 a pulsed source current i sm *2 - - continuous source current 90 - i s = 40a di/dt = 100a/ m s reverse recovery charge q rr *5 - 100 - l body diode electrical characteristics (source-drain)(t a = 25c) parameter symbol conditions values unit min. typ. max. gate plateau voltage v (plateau) v dd ? 50v, i d = 40a - 3.1 3/12 2012.08 - rev.a downloaded from: http:///
RSJ400N10 l electrical characteristic curves 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 0.01 0.1 1 10 0.00010.001 0.01 0.1 1 10 100 1000 t a =25 oc r th(j-c)(t) = r (t) r th(ch-c) r th(j-c) = 2.5 oc /w top d = 1 d = 0.5 d = 0.1 d = 0.05 d = 0.01 d = single 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 t a =25 oc single pulse p w = 100us p w = 1ms p w = 10ms operation in this area is limited by r ds(on) fig.1 power dissipation derating curve fig.2 maximum safe operating area power dissipation : p d /p d max. [%] drain current : i d [a] fig.3 normalized transient thermal resistance vs. pulse width normalized transient thermal resistance : r (t) pulse width : p w [s] junction temperature : t j [ c] drain - source voltage : v ds [v] 4/12 2012.08 - rev.a downloaded from: http:/// www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RSJ400N10 l electrical characteristic curves 0.1 1 10 100 0.01 0.1 1 10 100 v dd =50v,r g =25 w v gf =10v,v gr =0v starting t ch =25 oc 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 t a =25 oc pulsed v gs =2.0v v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.5v v gs =3.0v 0 10 20 30 40 0 2 4 6 8 10 v gs =2.0v t a =25 oc pulsed v gs =10.0v v gs =4.0v v gs =2.5v v gs =3.0v fig.6 typical output characteristics(i) drain current : i d [a] drain - source voltage : v ds [v] fig.7 typical output characteristics(ii) drain current : i d [a] drain - source voltage : v ds [v] fig.4 avalanche current vs inductive load avalanche current : i as [a] coil inductance : l [mh] fig.5 avalanche energy derating curve vs junction temperature avalanche energy : e as / e as max. [%] junction temperature : t j [ c] 5/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RSJ400N10 l electrical characteristic curves 80 85 90 95 100 105 110 115 120 -50 0 50 100 150 v gs = 0v i d = 1ma 0.001 0.01 0.1 1 10 100 0 1 2 3 4 5 v ds = 10 v t a = 125 oc t a = 75 oc t a = 25 oc t a = - 25 oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 v ds = 10v i d = 1ma 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds = 10 v t a = - 25 oc t a =25 oc t a =75 oc t a =125 oc fig.10 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ c] fig.11 transconductance vs. drain current transconductance : g fs [s] drain current : i d [a] fig.8 breakdown voltage vs. junction temperature junction temperature : t j [ c] fig.9 typical transfer characteristics gate - source voltage : v gs [v] drain current : i d [a] normarize drain - source breakdown voltage : v (br)dss [v] 6/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RSJ400N10 l electrical characteristic curves fig.14 static drain - source on - state resistance vs. junction temperature fig.13 static drain - source on - state resistance vs. drain current(i) 0 20 40 60 80 100 0 5 10 15 t a =25 oc i d = 40a i d = 20a 10 100 0.01 0.1 1 10 100 t a =25 oc v gs = 10 v v gs = 4.0v 0 10 20 30 40 50 60 70 80 90 100 -50 0 50 100 150 v gs = 10v i d = 40a static drain - source on-state resistance : r ds(on) [m w ] junction temperature : t j [oc] static drain - source on-state resistance : r ds(on) [m w ] drain current : i d [a] fig.12 static drain - source on - state resistance vs. gate source voltage static drain - source on-state resistance : r ds(on) [m w ] gate - source voltage : v gs [v] 7/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RSJ400N10 l electrical characteristic curves 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 10 100 1000 0.01 0.1 1 10 100 t a =125 oc t a =75 oc t a =25 oc t a = - 25 oc v gs = 10v 10 100 1000 0.01 0.1 1 10 100 v gs = 4.5v t a =125 oc t a =75 oc t a =25 oc t a = - 25 oc 10 100 1000 0.01 0.1 1 10 100 t a =125 oc t a =75 oc t a =25 oc t a = - 25 oc v gs = 4.0v fig.15 static drain - source on - state resistance vs. drain current(ii) static drain - source on-state resistance : r ds(on) [m w ] drain current : i d [a] fig.16 static drain - source on - state resistance vs. drain current(iii) static drain - source on-state resistance : r ds(on) [m w ] drain current : i d [a] fig.18 drain current derating curve drain current dissipation : i d /i d max. (%) fig.17 static drain - source on - state resistance vs. drain current(iv) static drain - source on-state resistance : r ds(on) [m w ] drain current : i d [a] junction temperature : t j [oc] 8/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RSJ400N10 l electrical characteristic curves 10 100 1000 10000 100000 0.01 0.1 1 10 100 c oss c rss c iss t a = 25oc f = 1mhz v gs = 0v 1 10 100 1000 10000 0.01 0.1 1 10 100 t r t f t d(on) t d(off) t a =25 oc v dd = 50 v v gs = 10 v r g =10 w 0 5 10 0 10 20 30 40 50 60 70 80 90 100 t a =25 oc v dd = 50 v i d = 40 a r g =10 w 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 t a =125oc t a =75oc t a =25oc t a = - 25 oc v gs =0v fig.19 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] fig.21 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : q g [nc] fig.20 switching characteristics switching time : t [ns] drain current : i d [a] fig.22 source current vs. source - drain voltage source current : i s [a] source-drain voltage : v sd [v] 9/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RSJ400N10 l electrical characteristic curves 10 100 1000 0.1 1 10 100 t a =25 oc di / dt = 100a / m s v gs = 0v fig23 reverse recovery time vs.source current reverse recovery time : trr [ns] source current : i s [a] 10/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RSJ400N10 l measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalanche waveform 11/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RSJ400N10 l dimensions (unit : mm) dimension in mm/inches lpts l3 b2 b3 e b l2 e c1 a2 l1 c h a3 lp l l4 l3 l2 l1 b6 x b a b a1 e b5 d a min max min max a1 0.00 0.30 0 0.012 a2 4.30 4.70 0.169 0.185 a3 b 0.68 0.98 0.027 0.039 b2b3 1.14 1.44 0.045 0.057 c 0.30 0.60 0.012 0.024 c1 1.10 1.50 0.043 0.059 d 9.80 10.40 0.386 0.409 e 8.80 9.20 0.346 0.362 e h e 12.80 13.40 0.504 0.528 l 2.70 3.30 0.106 0.13 l1 0.90 1.50 0.035 0.059 l2l3 l4 lp 0.90 1.50 0.035 0.059 x - 0.25 - 0.01 min max min max b5 - 1.23 - 0.049 b6 - 10.40 - 0.409 l1 - 2.10 - 0.083 l2 - 7.55 - 0.297 l3 - 13.40 - 0.528 1.10 0.043 dim milimeters inches 8.90 0.35 2.54 0.10 0.25 0.01 1.00 0.039 dim milimeters inches 7.25 0.285 patterm of terminal position areas 12/12 2012.08 - rev.a downloaded from: http:///
r1120a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, i s permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement witho ut notice. the content specied herein is for the purpose of introducing rohm's produ cts (hereinafter "products"). if you wish to use any such product, please be sure to refer to the spec ications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the periph eral conditions must be taken into account when design ing circuits for mass production. great care was taken in ensuring the accuracy of the information spec ied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typica l functions of and examples of application circuits for the produc ts. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispu te arising from the use of such technical information. the products specied in this document are intended to be used with general-us e electronic equipment or devices (such as audio visual equipment, ofce-automati on equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation toler ant. while rohm always makes efforts to enhance the quality and reliability of its pr oducts, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the produ cts safety measures to guard against the possibility of physical injury, re or any other damage cause d in the event of the failure of any product, such as derating, redundancy, re control and fai l-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of th e prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medic al instrument, transportation equipment, aerospace machinery, nu clear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsi bility in any way for use of any of the products for the above special purposes. if a product is intended to be used for an y such special purpose, please contact a rohm sales representative befor e purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be req uired to obtain a license or permit under the law. downloaded from: http:///

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